Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter

Abstract

The role of steady-state and transient velocity overshoot in switching an unloaded 0.1-micron CMOS inverter is evaluated for the first time using Monte Carlo device simulation. Our results indicate switching times decrease by approximately 1 psec for MC versus DD modeling. Unfortunately, no evidence is found that transient velocity overshoot contributes to this decrease in switching times.