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Publication
VLSI Design
Paper
Monte Carlo and hydrodynamic simulation of a one dimensional n+-n- N+ silicon diode
Abstract
An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the "benchmark" n+- n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.