Conference paper
Imaging of oxide and interface charges in SiO2-Si
R. Ludeke, E. Cartier
Microelectronic Engineering
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
R. Ludeke, E. Cartier
Microelectronic Engineering
S. Washburn, R.A. Webb, et al.
Physical Review B
R. Ludeke, H.J. Wen
Microelectronic Engineering
T.P. Smith III, J.A. Brum, et al.
Physical Review Letters