Publication
IEEE T-ED
Paper

Modeling Projection Printing of Positive Photoresists

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Abstract

The accompanying papers “Optical Lithography” and Characterization of Positive Photoresist” introduce the concepts of modeling using destruction of the photoactive inhibitor compound to describe exposure and a surface-limited removal rate to describe development together with the optical exposure parameters A, B, and C and a rate relationship, R(M), which characterize the photo-resist for modeling purposes. This paper applies the model tc the projection exposure environment: exposure and developmert of photoresist are treated with a simulation model that allows computation of image surface profiles for positive photoresist exposed with a diffraction limited real image. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1975

Publication

IEEE T-ED

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