Daniel Guidotti
Proceedings of SPIE 1989
A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence degradation rate in GaAs, its power dependence, and its independence on lattice temperature.
Daniel Guidotti
Proceedings of SPIE 1989
Conrad Lanza, Harold J. Hovel
IEEE T-ED
N. Sosa, Theodore G. Van Kessel, et al.
ECS Transactions
Harold J. Hovel, D. Guidotti
IEEE T-ED