Publication
Applied Physics Letters
Paper

Model for degradation of band-gap photoluminescence in GaAs

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Abstract

A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence degradation rate in GaAs, its power dependence, and its independence on lattice temperature.

Date

01 Jan 1988

Publication

Applied Physics Letters

Authors

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