Modal Dispersion and Attenuation Measurements of Silicon Nitride and Silicon Oxynitride Waveguides Using a Streak Camera

Paul May; S. Basu; George L.-T. Chiu; G. Arjavalingam

doi:10.1109/50.47876

Journal of Lightwave Technology

Paper

01 Jan 1990

Modal Dispersion and Attenuation Measurements of Silicon Nitride and Silicon Oxynitride Waveguides Using a Streak Camera

View publication

Abstract

Attenuation and dispersion characteristics for different modes of dielectric waveguides fabricated on silicon have been characterized by measuring the propagation of short pulses using a synchroscan streak camera. © 1990, IEEE

Conference paper

High speed device testing and internal node diagnostics

Paper

GaAs multiple quantum well waveguide modulators on silicon substrates

Paper

Noncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5-/xm CMOS SRAM

Conference paper

Amplification of 25-ps AIGaAs Laser Diode Pulses at 1 kHz in Titanium-Doped Sapphire

View all publications

Abstract

Related

High speed device testing and internal node diagnostics

GaAs multiple quantum well waveguide modulators on silicon substrates

Noncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5-/xm CMOS SRAM

Amplification of 25-ps AIGaAs Laser Diode Pulses at 1 kHz in Titanium-Doped Sapphire