The DX centre
T.N. Morgan
Semiconductor Science and Technology
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperatures. The low-field mobility is a nonmonotonic function of carrier density and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the nonparabolicity of the bandstructure. At a critical density, p c ∼ 0.35-0.5 electrons/nm, the drift velocity saturates at around one-third of the Fermi velocity. Above p c, the velocity increases with field strength with no apparent saturation. © 2006 American Chemical Society.
T.N. Morgan
Semiconductor Science and Technology
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997