About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-MTT
Paper
Microwave inductors and capacitors in standard multilevel interconnect silicon technology
Abstract
Spiral inductors and metal-to-metal capacitors for microwave applications, which are integrated on a silicon substrate by using standard 0.8 jum BiCMOS technology, are described. Optimization of the inductors has been achieved by tailoring the vertical and lateral dimensions and by shunting several interconnect metal layers together. Lumped element models of inductors and capacitors provide detailed understanding of the important geometry and technological parameters on the device characteristics. The high quality factors of nearly 10 for the inductors are among the best results in silicon, particularly when using standard silicon technology. © 1996 IEEE.