Publication
Physical Review Letters
Paper

Microscopic model of heteroepitaxy of GaAs on Si(100)

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Abstract

A new microscopic model of heteroepitaxial growth is introduced using GaAs on Si(100) as a prototype. This model takes into account specific features of surface topology, predicts that in the prototype system conventional two-dimensional epitaxy should be inhibited, and provides a fundamental explanation for three-dimensional nature of the initial stages of growth. The ingredients of the model, which are supported by total-energy calculations, include new structural geometries for each state of growth and the chemical and rehybridization reactions linking these stages. © 1989 The American Physical Society.

Date

22 May 1989

Publication

Physical Review Letters

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