About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Methyl- and dimethyl-associated paramagnetic centers in SiO2 thin films
Abstract
SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-deposited films and in films thermally treated below 500 °C while the latter are observed in films that have been thermally treated between 700 and 950 °C. These hydrocarbon-containing paramagnetic centers originate from TEOS's ethyl constituents that are incorporated in the SiO2 film during growth.