U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Results of self-consistent electronic-structure calculations aluminum deposited on Ge, as a function of metal coverage, provide strong evidence for overlayer metallization. At monolayer metal coverages, the overlayer changes into a (quasi-) two-dimensional metal characterized by a (modulated) ladder-type density of states. The origin of this transition is traced to the metal-semiconductor interlayer-distance relaxation upon metallization. Our results are in agreement with recent experimental observations, and have important implications for Schottky-barrier formation. © 1986 The American Physical Society.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
E. Burstein
Ferroelectrics
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