Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Results of self-consistent electronic-structure calculations aluminum deposited on Ge, as a function of metal coverage, provide strong evidence for overlayer metallization. At monolayer metal coverages, the overlayer changes into a (quasi-) two-dimensional metal characterized by a (modulated) ladder-type density of states. The origin of this transition is traced to the metal-semiconductor interlayer-distance relaxation upon metallization. Our results are in agreement with recent experimental observations, and have important implications for Schottky-barrier formation. © 1986 The American Physical Society.
Imran Nasim, Melanie Weber
SCML 2024
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Ming L. Yu
Physical Review B