S.-L. Zhang, F.M. D'Heurle
Applied Physics Letters
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S 5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.
S.-L. Zhang, F.M. D'Heurle
Applied Physics Letters
S. Petersson, J.E.E. Baglin, et al.
Journal of Applied Physics
L. Stolt, F.M. D'Heurle
Thin Solid Films
Q.Z. Hong, F.M. D'Heurle, et al.
Applied Physics Letters