Conference paper
High-performance SiGe pMODFETs grown by UHV-CVD
S.J. Koester, R. Hammond, et al.
EDMO 1999
A new method for measuring the output (ID-VD) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 µm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated. © 1995 IEEE
S.J. Koester, R. Hammond, et al.
EDMO 1999
F. Assaderaghi, G. Shahidi, et al.
VLSI Technology 1996
Keith A. Jenkins, J.D. Cressler
IEDM 1988
W.H. Henkels, N.C.-C. Lu, et al.
Workshop on Low Temperature Semiconductor Electronics 1989