J. Gautier, Keith A. Jenkins, et al.
IEDM 1995
A new method for measuring the output (ID-VD) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 µm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated. © 1995 IEEE
J. Gautier, Keith A. Jenkins, et al.
IEDM 1995
James Warnock, Ghavam G. Shahidi, et al.
IEEE Electron Device Letters
Keith A. Jenkins, S. Kim, et al.
ICICDT 2007
Keith A. Jenkins, J.D. Cressler
IEDM 1988