M. Soyuer, J.N. Burghartz, et al.
BCTM 1996
A new method for measuring the output (ID-VD) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 µm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated. © 1995 IEEE
M. Soyuer, J.N. Burghartz, et al.
BCTM 1996
M.J. Immediato, Keith A. Jenkins
Scanning
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C. Wann, L. Su, et al.
ISSCC 1998