J.C. Tsang, P.M. Mooney, et al.
Journal of Applied Physics
Strained Si devices exhibit enhanced carrier mobility compared to that of standard Si CMOS devices of the same dimensions. Recent strained Si CMOS device results are reviewed. Materials issues related to the strained Si/relaxed SiGe heterostructures required for a strained Si CMOS technology are discussed.
J.C. Tsang, P.M. Mooney, et al.
Journal of Applied Physics
G. Northrop, P.M. Mooney
Journal of Electronic Materials
C.E. Murray, I.C. Noyan, et al.
Applied Physics Letters
S.J. Koester, R. Hammond, et al.
DRC 2000