S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A technique has been developed that allows the energy profile of quantum wells in AlxGa1-xAs heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons. © 1991 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Mark W. Dowley
Solid State Communications