About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Manipulating stress in Cu/low-k dielectric nanocomposites
Abstract
The interaction of x-rays with organic dielectric materials, which alters their mechanical properties, affects values of stress generated within encapsulated Cu structures. In particular, the evolution of stress within submicron Cu interconnect structures encapsulated by an organosilicate glass can be investigated in situ using synchrotron-based x-ray diffraction. The overall geometry of the composite, along with the amount of irradiation, dictates the change in stress of the Cu features. A quantitative comparison of these findings to mechanical modeling results reveals two modes of modification within the dielectric film: a densification that changes the effective eigenstrain followed by an increase in elastic modulus. © 2011 American Institute of Physics.