Paper

01 Jan 1985

Magnetotunneling in Al_xGa_1-xAs capacitors

View publication

Abstract

Observations of magnetic freezeout, sequential-single phonon emission, and the effect of Landau levels on tunneling in n-GaAs-undoped AlxGa1-xAs-n+GaAs capacitors are reviewed. © 1985.

Paper

Fractional quantization in ac conductance of AlxGa1-xAs capacitors

T.W. Hickmott

Physical Review Letters

Paper

Negative charge, barrier heights, and the conduction-band discontinuity in Al_xGa_1-xAs capacitors

T.W. Hickmott, P. Solomon, et al.

Journal of Applied Physics

Paper

Electrical measurements on n⁺-GaAs-undoped Ga _0.6Al_0.4 As-n-GaAs capacitors

P. Solomon, T.W. Hickmott, et al.

Applied Physics Letters

Paper

Tranverse magnetotunneling in AlxGa1-xAs capacitors. I. Angular dependence

T.W. Hickmott

Physical Review B

View all publications