Effect of bombardment by glass-forming ions on thermally stimulated ionic conductivity of sodium in SiO2

Thermally stimulated ionic conductivity measurements have been made of sodium motion through SiO2 grown thermally on silicon, and through thermal SiO2 after bombardment by Ar+, B+, and P+ ions of 5 keV energy. Ion implantation of SiO2 by glass-forming ions such as B+ or P+ creates traps at the SiO2-Al interface that can markedly reduce Na+ motion in SiO2. © 1974 The American Physical Society.