Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3 O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics. © 2006 The American Physical Society.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
R. Ghez, J.S. Lew
Journal of Crystal Growth
A. Gangulee, F.M. D'Heurle
Thin Solid Films
E. Burstein
Ferroelectrics