R.W. Gammon, E. Courtens, et al.
Physical Review B
We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3 O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics. © 2006 The American Physical Society.
R.W. Gammon, E. Courtens, et al.
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Ronald Troutman
Synthetic Metals
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997