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SPIE Advances in Semiconductors and Superconductors 1990
Measurements of the magnetocapacitance of a two-dimensional electron gas in high mobility GaAs(Ga, Al)As heterostructure confirm, for the first time, the relationship between the density of states and the capacitance of a two-dimensional electron gas. We present the first magnetocapacitance measurements in the fractionally quantized Hall regime. © 1986.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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