Publication
Applied Physics Letters
Paper

Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices

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Abstract

With the application of a magnetic field, we have observed a semimetal-to-semiconductor transition in InAs-GaSb superlattices with closely overlapped subbands of electrons and holes. The transition is manifested in a sharp increase in the magnetoresistance in the quantum limit, where the ground Landau levels associated with the subbands are crossed at the Fermi level, resulting in carrier depletion.

Date

23 Jul 2008

Publication

Applied Physics Letters

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