Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have measured the temperature dependence of conductance of electrons in 2D sodium induced impurity bands in silicon inversion layers from 4.2 to 80 K observing both activation of electrons to a mobility edge. E1, and nearest neighbor hopping, E3 in magnetic fields up to 25 T. The results are that E1 decreases slightly between 0 and about 20 T and then increases slightly. The prefactor decreases by about a factor of four. E3 increases monotonically. None of these results was expected. © 1984.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Revanth Kodoru, Atanu Saha, et al.
arXiv
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Lawrence Suchow, Norman R. Stemple
JES