Publication
Journal of Applied Physics
Paper

Luminescence of GaP at high excitation

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Abstract

Apart from the usual bound-exciton luminescence due to Te and N centers, broader peaks which appear at high excitation may be explained by free-carrier screening of the free excitons, or by high-density excitonic effects. A weak-luminescence structure observed around 2.8 eV, which has not been reported before, may be due to conduction electrons at the L point with holes at Γ15 bound to the neutral donors. © 1973 American Institute of Physics.

Date

09 Oct 2003

Publication

Journal of Applied Physics

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