Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states. © 1994.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000