A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states. © 1994.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Eloisa Bentivegna
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