R. Tsu, W.E. Howard, et al.
Physical Review
Observations of well developed negative resistance regions in both forward and reversed biased Si Zener diodes are explained in terms of a combination of impact ionization in the bulk material and Zener breakdown in the junction. © 1967.
R. Tsu, W.E. Howard, et al.
Physical Review
J.M. Gibson, R. Tsu
Applied Physics Letters
P.J. Stiles, L.L. Chang, et al.
Applied Physics Letters
R. Tsu, L. Esaki
Applied Physics Letters