Publication
Applied Physics Letters
Paper

High-field photoconductivity of amorphous GeTe and GeSe films

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Abstract

The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact-semiconductor interface. © 1970 The American Institute of Physics.

Date

21 Oct 2003

Publication

Applied Physics Letters

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