About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
High-field photoconductivity of amorphous GeTe and GeSe films
Abstract
The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact-semiconductor interface. © 1970 The American Institute of Physics.