H. Cho, K.B. Jung, et al.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Paper
Low-resistance IrMn and PtMn tunnel valves for recording head applications
Abstract
We have investigated the use of ultrathin Al2O3 barriers to fabricate low-resistance tunnel-valve sensors suitable for recording heads. Tunnel valves of the type underlayer/(IrMn or PtMn)/CoFe/ Al2O3/CoFe/NiFe/Cap layer have been fabricated by magnetron sputtering. Tunnel barriers are formed by Al metal deposition followed by in situ oxidation, and tunnel-junction test devices are built by photolithography with areas down to 1 × 1 μm2. Specific resistances as low as 13 Ω μm2 with 25% tunnel magnetoresistance have been obtained using Al thicknesses of 6-7 Å. © 2001 American Institute of Physics.
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