Jie Gao, James F. McMillan, et al.
Applied Physics Letters
We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off 'switching states over an optical bandwidth of 110nm, owing to the implementation of broadband 50% couplers. Full 2x2 switching functionality is demonstrated, with low power consumption (∼ 3 mW) and a fast switching time (< 4 ns). The utilization of standard CMOS metallization results in a low drive voltage (< 1 V) and a record-low V πL (∼ 0.06 V·mm). The wide optical bandwidth is maintained for temperature variations up to 30K. © 2009 Optical Society of America.
Jie Gao, James F. McMillan, et al.
Applied Physics Letters
Eric J. Zhang, Chu C. Teng, et al.
Sensors (Switzerland)
F. Horst, William M. J. Green, et al.
SPIE Photonics Europe 2008
Wesley D. Sacher, William M. J. Green, et al.
CLEO 2013