About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Long-range structural and electronic coherence in amorphous semiconductors
Abstract
We use curved-space polytope lattices to model the defect-free regions of amorphous semiconductors. A particular structural feature, a channeling axis associated with a local screw symmetry, is suggested by the polytope model and can be found in previous amorphous network models. Its presence implies electronic eigenstates with phase coherence over many bond lengths. We present a "band structure" for amorphous Si based on this coherence. © 1984 The American Physical Society.