L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The dependence on the scattering wave vector of a nonequilibrium LO phonon distribution generated by hot-electron relaxation is measured in thick GaAs and Al0.11Ga0.89As layers, and a 500- GaAs layer using picosecond Raman scattering in back and forward scattering geometries. The absence of q=0 nonequilibrium phonons in the thick samples, and their presence in the 500- sample, demonstrates that Raman-active LO phonons in AlxGa1-xAs have well-defined wave vectors and are not localized by alloy disorder. © 1988 The American Physical Society.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
T. Schneider, E. Stoll
Physical Review B
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Imran Nasim, Melanie Weber
SCML 2024