Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
The dependence on the scattering wave vector of a nonequilibrium LO phonon distribution generated by hot-electron relaxation is measured in thick GaAs and Al0.11Ga0.89As layers, and a 500- GaAs layer using picosecond Raman scattering in back and forward scattering geometries. The absence of q=0 nonequilibrium phonons in the thick samples, and their presence in the 500- sample, demonstrates that Raman-active LO phonons in AlxGa1-xAs have well-defined wave vectors and are not localized by alloy disorder. © 1988 The American Physical Society.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films