J. Mannhart, H. Hilgenkamp, et al.
Physical Review Letters
Surface-plasmon-polariton-mediated luminescence is observed when electrons are injected into thin Al films from the conduction band of SiO2. These electron-injector structures are strikingly similar to light-emitting tunnel junctions, although tunneling can be ruled out as the driving mechanism. The emission arises from the energy relaxation of the steady-state hot-electron distribution which exists in the metal under continuous current injection. The same mechanism must explain much of the luminescence from tunnel junctions. © 1983 The American Physical Society.
J. Mannhart, H. Hilgenkamp, et al.
Physical Review Letters
D.J. Dimaria
Solid-State Electronics
C.C. Tsuei, J.R. Kirtley
Journal of Alloys and Compounds
J.R. Kirtley
Physical Review B