Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The decay times of two bound exciton emission lines in InP have been measured at very low excitation levels and found to be of the order of 0.5 and 1.5 ns. These times agree within a factor of two with theoretical values, which were estimated using the model of Rashba and Gurgenishvili. The oscillator strength per molccule of the free exciton has been evaluated and found to be 8 × 10−5 The bound exciton oscillator strengths are larger by five orders of magnitude. Copyright © 1971 WILEY‐VCH Verlag GmbH & Co. KGaA
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
R. Ghez, M.B. Small
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007