About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
MRS Symposium 1983
Conference paper
LASER-INDUCED FLUORESCENCE DETECTION OF DIATOMIC PRODUCTS OF REACTIVE ION ETCHING: SiN, SiO, AND SiF.
Abstract
Laser-induced fluorescence is used to detect a variety of silicon-containing diatomic radicals produced by the reactive ion etching and glow discharge sputtering of silicon and its oxide and nitride. The products include SiN, SiO, and SiF. Examination of the concentration of these molecules as a function of plasma conditions provides information about their production mechanisms.