Large second-order optical nonlinearities in pulsed laser ablated silicon carbide thin films

Abstract

Large second-order nonlinear optical response has been observed in silicon carbide thin films deposited by pulsed laser ablation on sapphire and fused silica substrates; films on both substrates were uniform and optically transparent but exhibited distinct orientations. The d33 values of the sapphire-substrate samples were determined to be 10 pm/V.© 1995 American Institute of Physics.