C. Dimitrakopoulos, S. Purushothaman, et al.
DRC 1999
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
C. Dimitrakopoulos, S. Purushothaman, et al.
DRC 1999
R.B. Laibowitz, R.P. Robertazzi, et al.
Physical Review B
P. Chaudhari, B.A. Scott, et al.
Applied Physics Letters
R.A. Webb, S. Washburn, et al.
Japanese Journal of Applied Physics