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PaperEffect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layersB. Laikhtman, M. Heiblum, et al.Applied Physics Letters
PaperPseudomorphic InGaAs base ballistic hot-electron deviceK. Seo, M. Heiblum, et al.Applied Physics Letters
Conference paperBALLISTIC TRANSPORT AND HOT ELECTRON SPECTROSCOPY IN TUNNELLING HOT ELECTRON TRANSFER AMPLIFIER (THETA).M. HeiblumTMPEO 1986
