PaperElectron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructuresW.T. Masselink, N. Braslau, et al.Solid State Electronics
PaperTemperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum wellY.S. Huang, H. Qiang, et al.Journal of Applied Physics
PaperGrowth and transport properties of thin Bi films on InP(110)B.G. Briner, R.M. Feenstra, et al.Semiconductor Science and Technology
PaperBand structure and direct transition electroluminescence in the In 1-xGaxP alloysM.R. Lorenz, W. Reuter, et al.Applied Physics Letters