PaperGas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)T.P. Chin, J.C.P. Chang, et al.Applied Physics Letters
PaperEffect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)I.M. Vitomirov, A. Raisanen, et al.Journal of Electronic Materials
PaperUse of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xPT.J. de Lyon, N.I. Buchan, et al.Journal of Crystal Growth
Conference paperSurface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructionsI.M. Vitomirov, A. Raisanen, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
