Ion Implantation Doping of Si with 70 to 300 keV B. P. and As

W.K. Chu, B.L. Crowder, et al.

Applied Physics Letters

K.N. Tu, P. Chaudhari, et al.

Journal of Applied Physics

B.J. Masters, J.M. Fairfield, et al.

Radiation Effects

J.C. Tsang, M.W. Shafer, et al.

Physical Review B