Investigations of half and full select disturb rates in a toggle magnetic random access memory

Abstract

Immunity to half select disturbs and self-activated toggle errors were measured for toggle magnetic memory cells at high switching speeds (200 ps rise time pulses, 100 ns in duration). Measurements of the immunity of cells to word line or bit line half selects indicate lifetimes for magnetic reversal of at least 1037 disturbs can be expected for properly designed cells. The lifetime for error free toggling has also been measured. The data indicate that error free toggle switching of a cell can be expected to be greater than 1018 toggles for optimized write fields. © 2008 American Institute of Physics.