Conference paper
SCANNING TUNNELING MICROSCOPY.
G. Binnig, H. Rohrer
ICPS Physics of Semiconductors 1984
We have imaged the (001) surface of KBr with a UHV atomic force microscope at 4.2 K and 300 K. The sample was prepared by cleaving it in UHV along the (001) plane. We achieved atomic resolution at 4.2 K and resolved both the potassium and the bromium ions. We show atomically resolved images of flat terraces as large as 25 nm by 25 nm. Force-versus-distance measurements were taken, and the influence of the loading force acting between sample and cantilever on the appearance of friction effects and sample damage was studied. © 1992.
G. Binnig, H. Rohrer
ICPS Physics of Semiconductors 1984
G. Binnig, H. Rohrer
Journal of Crystal Growth
P. Vettiger, G. Cross, et al.
IEEE TNANO
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Applied Physics Letters