The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have studied the interference of dipole-allowed deformation-potential Raman scattering and dipole-forbidden Fröhlich-induced scattering by LO-phonons near the Eo+Δo-gap on the (113) face of MBE-GaAs and on the (111) and (111) faces of bulk GaAs at 100 K. Absolute values of the squared Raman tensor are displayed. A fit of the resonance profile reveals that the purity of the MBE-sample under investigation compares well with that of (001) LPE-samples studied previously. The (111) and (111) faces of GaAs show opposite signs in the interference, in accordance with symmetry considerations. © 1987.
T.N. Morgan
Semiconductor Science and Technology
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992