Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd2Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd2Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd2Si occurs between 400 and 500°C. © 1985.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Robert W. Keyes
Physical Review B
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021