Interface traps induced by hole trapping in metal-oxide semiconductor devices

Abstract

Interface traps near the SiSiO2 interface induced by hole trapping alone are reported. It is found that interface traps are generated directly due to the presence of trapped holes in metal-oxide-semiconductor devices, and that the loss of trapped holes due to annihilation by electron injection is accompanied by a reduction of interface traps. This observation is distinct from previous reports of a ‘conversion’ of trapped holes to interface traps or a process of interface trap generation in which the presence of trapped holes is required in an intermediate step. It is shown that the origin of these interface traps is not the Pb center, nor a recombination center in general; thus the phenomenon may help to explain the discrepancy between the density of electrically measured interface traps and Pb center densities measured using electron paramagnetic resonance. © 1995, All rights reserved.