Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy

Abstract

Interface morphologies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy (MBE) have been studied using reflection high energy electron diffraction (RHEED). For the (110) Ge- GaAs, planar growths of both GaAs on Ge and Ge on GaAs are observed. The (111) Ge-GaAs, on the other hand, shows a rough growth of GaAs on Ge, and a planar one of Ge on GaAs, similar to those of (100) Ge-GaAs. The (110) and (111) results are discussed in terms of the orientation effect on the MBE growth of compound semiconductors and are consistent with that on (100) Ge-GaAs.