Michael C. Gaidis, Eugene J. O'Sullivan, et al.
IBM J. Res. Dev
A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©The Electrochemical Society.
Michael C. Gaidis, Eugene J. O'Sullivan, et al.
IBM J. Res. Dev
Jeffrey B. Driscoll, William Astar, et al.
IEEE Journal on Selected Topics in Quantum Electronics
Jun Rong Ong, Marcelo Davanco, et al.
CLEO-SI 2012
Yanqing Wu, Damon B. Farmer, et al.
Proceedings of the IEEE