Joris Van Campenhout, William M. J. Green, et al.
Optics Express
A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©The Electrochemical Society.
Joris Van Campenhout, William M. J. Green, et al.
Optics Express
Faraz Najafi, Jacob Mower, et al.
CLEO 2014
Yurii A. Vlasov, William M. J. Green, et al.
GFP 2008
Yurii A. Vlasov, Fengnian Xia, et al.
CLEO 2008