Conference paper
High-speed optical receivers in advanced silicon technologies
J. Schaub, S.M. Csutak, et al.
LEOS 2002
An optical receiver consisting of an avalanche photodiode integrated with a trans-impedance amplifier is reported. The optical receiver was fabricated on a 2 μm thick SOI substrate in a 130nm unmodified CMOS process flow. The unity gain external quantum efficiency of the photodetectors was ∼10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted for 5 dB improvement in receiver sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.
J. Schaub, S.M. Csutak, et al.
LEOS 2002
S.M. Csutak, J. Schaub, et al.
IEEE Photonics Technology Letters
S.J. Koester, J. Schaub, et al.
DRC 2004
Qiqing Ouyang, J. Schaub
Device Research Conference 2003