Injection luminescence from CdS(112»0) studied with scanning tunneling microscopy

Abstract

We have used a scanning-tunneling-microscope tip as a source of both electrons and holes to study injection luminescence from CdS(112»0) surfaces cleaved in UHV. Band-gap radiation and emission from radiative deep levels are resolved in optical spectra. Isochromat photon-intensity spectra exhibit, as a function of negative tip voltage, discrete steps which are discussed in terms of pair-creation thresholds. For positive tip polarity, hole creation in the valence band results in a continuous increase in the luminescence. Spatial maps of the resulting integrated light intensity acquired simultaneously with the conventional topographs reveal subnanometer-scale image contrasts which are attributed to defects, such as dislocations or radiative deep levels. © 1992 The American Physical Society..