Publication
IEEE Electron Device Letters
Paper

Inability of single carrier tunneling barriers to give subthermal subthreshold swings in MOSFETs

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Abstract

A simple potential mapping is used to show that tunneling through a single barrier, as in Schottky-barrier tunneling or source-to-drain tunneling in MOSFETs, cannot give rise to subthreshold swings below the thermionic limit (60 mV/decade at room temperature). While cognizant of the difficulty of proving a negative, it is thus highly unlikely that Schottky-barrier tunneling alone can result in reported instances of subthreshold swings that are less than 60 mV/decade. © 2006 IEEE.

Date

01 Jun 2010

Publication

IEEE Electron Device Letters

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