A. Palevski, Paul M. Solomon, et al.
IEEE Electron Device Letters
A simple potential mapping is used to show that tunneling through a single barrier, as in Schottky-barrier tunneling or source-to-drain tunneling in MOSFETs, cannot give rise to subthreshold swings below the thermionic limit (60 mV/decade at room temperature). While cognizant of the difficulty of proving a negative, it is thus highly unlikely that Schottky-barrier tunneling alone can result in reported instances of subthreshold swings that are less than 60 mV/decade. © 2006 IEEE.
A. Palevski, Paul M. Solomon, et al.
IEEE Electron Device Letters
Francois Pagette, Paul M. Solomon, et al.
MRS Proceedings 2008
Hon-Sum Philip Wong, David J. Frank, et al.
Proceedings of the IEEE
Zhihong Chen, Joerg Appenzeller, et al.
Science