SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
The crystallization of amorphous CoSi2 is an ideal phase transformation for in-situ studies. This system satisfies the assumptions underlying the Johnson-Mehl-Avrami analysis rather well and produces a microstructure which can be modelled realistically. The nucleation rate can be measured independently of the growth rate. The activation energy for growth is found to be 1.1 eV/atom and microstructural observations suggest that the interface between amorphous and crystalline material is likely to advance by a ledge mechanism. © 1989.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
K.N. Tu
Materials Science and Engineering: A
William Krakow, David A. Smith
Journal of Materials Research
L. Clevenger, C.V. Thompson, et al.
Applied Physics Letters